DG50X07T2 Transistor: IGBT; 650V; 50A; 714W; TO247

• Power dissipation — 714
• Collector-emitter voltage — 650
• Collector current — 50A
• Turn-on time — 3.6E-8
• Turn-off time — 2.0E-7
• Gate charge — 3.5E-7
• Pulsed collector current — 150A
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• Gate-emitter voltage — ±20V
• Case — TO247
• Transistor type — IGBT
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• Features of semiconductor devices — integrated anti-parallel diode
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• Kind of package — tube
• Montāža — through-hole technology

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