DG50Q12T2 Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS

• Power dissipation — 672
• Collector-emitter voltage — 1200
• Collector current — 50A
• Turn-on time — 1.72E-7
• Turn-off time — 3.38E-7
• Gate charge — 3.7E-7
• Pulsed collector current — 150A
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• Case — TO247PLUS
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• Gate-emitter voltage — ±20V
• Transistor type — IGBT
• Features of semiconductor devices — integrated anti-parallel diode
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• Kind of package — tube
• Montāža — through-hole technology

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