DG40X12T2 Transistor: IGBT; 1200V; 40A; 468W; TO247

• Power dissipation — 468
• Collector-emitter voltage — 1200
• Collector current — 40A
• Turn-on time — 1.98E-7
• Turn-off time — 6.68E-7
• Gate charge — 2.7E-7
• Pulsed collector current — 120A
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• Gate-emitter voltage — ±20V
• Case — TO247
• Transistor type — IGBT
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• Features of semiconductor devices — integrated anti-parallel diode
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• Kind of package — tube
• Montāža — through-hole technology
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