SEMIKRON DANFOSS SKIIP12HEB066V1 IGBT modules

• Collector current — 15A
• Max. off-state voltage — 600
• Pulsed collector current — 40A
• Semiconductor structure — diode/thyristor/IGBT
• Topology — IGBT three-phase bridge
• Case — MiniSKiiP® 1
• —
• —
• —
• —
• Type of semiconductor module — IGBT
• —
• Application — for UPS
• Gate-emitter voltage — ±20V
• Mechanical mounting — screw
• Electrical mounting — Press-Fit
• —
• Topology — single-phase diode-thyristor bridge
• Topology — boost chopper

Atgriezties pie meklēšanas

Sākt jaunu meklēšanu ar atzīmētajiem filtriem