G3R20MT12N Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A

• Drain-source voltage — 1200
• Power dissipation — 365
• Drain current — 74A
• On-state resistance — 0.02
• Pulsed drain current — 240A
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — G3R™
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
• Manufacturer — GeneSiC SEMICONDUCTOR
• Semiconductor structure — single transistor
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• Technology — SiC

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