DG30X07T2 Transistor: IGBT; 650V; 30A; 208W; TO247

• Power dissipation — 208
• Collector-emitter voltage — 650
• Collector current — 30A
• Turn-on time — 1.0E-7
• Gate charge — 2.2E-7
• Turn-off time — 3.06E-7
• Pulsed collector current — 90A
• —
• —
• —
• —
• Gate-emitter voltage — ±20V
• Case — TO247
• Transistor type — IGBT
• —
• Features of semiconductor devices — integrated anti-parallel diode
• —
• —
• Kind of package — tube
• Montāža — through-hole technology
• —

Atgriezties pie meklēšanas

Sākt jaunu meklēšanu ar atzīmētajiem filtriem