IXFN140N30P Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A

• Drain-source voltage — 300
• Power dissipation — 700
• Drain current — 110A
• Gate charge — 1.85E-7
• Atgriezeniskās atjaunošanās laiks — 2.0E-7
• On-state resistance — 0.024
• Pulsed drain current — 300A
• Electrical mounting — screw
• —
• Kind of channel — enhancement
• —
• Case — SOT227B
• Technology — Polar™
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• —
• Mechanical mounting — screw
• —
• Manufacturer — IXYS
• —
• —
• —
• —
• Semiconductor structure — single transistor
• Technology — HiPerFET™

Atgriezties pie meklēšanas

Sākt jaunu meklēšanu ar atzīmētajiem filtriem