DG75X07T2L Transistor: IGBT; 650V; 75A; 428W; TO247PLUS

• Power dissipation — 428
• Collector-emitter voltage — 650
• Collector current — 75A
• Turn-on time — 2.64E-7
• Turn-off time — 3.69E-7
• Gate charge — 5.2E-7
• Pulsed collector current — 300A
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• Case — TO247PLUS
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• Gate-emitter voltage — ±20V
• Transistor type — IGBT
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• Features of semiconductor devices — integrated anti-parallel diode
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• Kind of package — tube
• Montāža — through-hole technology
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