BGH50N65ZF1 Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4

• Power dissipation — 357W
• Collector-emitter voltage — 650V
• Collector current — 50A
• Turn-on time — 54ns
• Turn-off time — 476ns
• Gate charge — 308nC
• Pulsed collector current — 200A
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• Technology — Trench
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• Case — TO247-4
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• Gate-emitter voltage — ±20V
• Technology — Field Stop
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• Type of transistor — IGBT
• Manufacturer — BASiC SEMICONDUCTOR
• Features of semiconductor devices — integrated anti-parallel diode
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• Technology — SiC SBD
• Kind of package — tube
• Mounting — through-hole technology

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