IXFN180N25T Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A

• Drain-source voltage — 250
• Power dissipation — 900
• Drain current — 168A
• On-state resistance — 0.0129
• Atgriezeniskās atjaunošanās laiks — 2.0E-7
• Gate charge — 3.64E-7
• Pulsed drain current — 500A
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — GigaMOS™
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
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• Manufacturer — IXYS
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• Semiconductor structure — single transistor

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