IXFN26N100P Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W

• Drain-source voltage — 1000
• Power dissipation — 595
• Drain current — 23A
• On-state resistance — 0.39
• Pulsed drain current — 65A
• Gate charge — 1.97E-7
• Atgriezeniskās atjaunošanās laiks — 3.0E-7
• Electrical mounting — screw
• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — Polar™
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
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• Manufacturer — IXYS
• Semiconductor structure — single transistor
• Technology — HiPerFET™

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