IXFN220N20X3 Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A

• Drain-source voltage — 200
• Power dissipation — 390
• Drain current — 160A
• On-state resistance — 0.0062
• Atgriezeniskās atjaunošanās laiks — 1.28E-7
• Gate charge — 2.04E-7
• Pulsed drain current — 500A
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
• Technology — X3-Class
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
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• Manufacturer — IXYS
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• Semiconductor structure — single transistor
• Technology — HiPerFET™
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