IXFN360N10T Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A

• Drain-source voltage — 100
• Power dissipation — 830
• Drain current — 360A
• On-state resistance — 0.0026
• Gate charge — 5.25E-7
• Atgriezeniskās atjaunošanās laiks — 1.3E-7
• Pulsed drain current — 900A
• Electrical mounting — screw
• —
• —
• Kind of channel — enhancement
• —
• Case — SOT227B
• —
• —
• Technology — GigaMOS™
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• —
• Mechanical mounting — screw
• —
• Manufacturer — IXYS
• —
• Semiconductor structure — single transistor
• Technology — HiPerFET™

Atgriezties pie meklēšanas

Sākt jaunu meklēšanu ar atzīmētajiem filtriem