IXFN180N15P Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A

• Drain-source voltage — 150
• Power dissipation — 680
• Drain current — 150A
• On-state resistance — 0.011
• Atgriezeniskās atjaunošanās laiks — 2.0E-7
• Gate charge — 2.4E-7
• Pulsed drain current — 380A
• Electrical mounting — screw
• —
• —
• Kind of channel — enhancement
• —
• —
• Case — SOT227B
• —
• —
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Technology — PolarHT™
• Mechanical mounting — screw
• Manufacturer — IXYS
• —
• —
• Semiconductor structure — single transistor
• Technology — HiPerFET™

Atgriezties pie meklēšanas

Sākt jaunu meklēšanu ar atzīmētajiem filtriem