IXFN44N100Q3 Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W

• Drain-source voltage — 1000
• Power dissipation — 960
• Drain current — 38A
• On-state resistance — 0.22
• Gate charge — 2.64E-7
• Atgriezeniskās atjaunošanās laiks — 3.0E-7
• Pulsed drain current — 110A
• Electrical mounting — screw
• Kind of channel — enhancement
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• Case — SOT227B
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
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• Mechanical mounting — screw
• Manufacturer — IXYS
• Technology — Q3-Class
• Semiconductor structure — single transistor
• Technology — HiPerFET™

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