IXFN420N10T Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA

• Drain-source voltage — 100
• Drain current — 420A
• On-state resistance — 0.0023
• Pulsed drain current — 1kA
• Gate charge — 6.7E-7
• Atgriezeniskās atjaunošanās laiks — 1.4E-7
• Electrical mounting — screw
• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — GigaMOS™
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
• Manufacturer — IXYS
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• Semiconductor structure — single transistor
• Technology — HiPerFET™

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