AOM065V120X2 Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W

• Drain-source voltage — 1200
• Power dissipation — 187.5
• Drain current — 29.6A
• On-state resistance — 0.09
• Gate charge — 6.23E-8
• Pulsed drain current — 85A
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• Kind of channel — enhancement
• Transistor type — N-MOSFET
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• Case — TO247-4
• Features of semiconductor devices — Kelvin terminal
• Polarisation — unipolar
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• Manufacturer — ALPHA & OMEGA SEMICONDUCTOR
• Kind of package — tube
• Montāža — through-hole technology
• Technology — SiC

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