AOTF5B65M1 Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ

• Power dissipation — 10
• Collector-emitter voltage — 650
• Collector current — 5A
• Turn-on time — 2.1E-8
• Turn-off time — 1.57E-7
• Gate charge — 1.4E-8
• Pulsed collector current — 15A
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• Gate-emitter voltage — ±30V
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• Case — TO220F
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• Transistor type — IGBT
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• Manufacturer — ALPHA & OMEGA SEMICONDUCTOR
• Kind of package — tube
• Montāža — through-hole technology

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