IXFN210N30X3 Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A

• Drain current — 210A
• Drain-source voltage — 300
• Power dissipation — 695
• On-state resistance — 0.0046
• Atgriezeniskās atjaunošanās laiks — 1.9E-7
• Gate charge — 3.75E-7
• Pulsed drain current — 650A
• Electrical mounting — screw
• Kind of channel — enhancement
• Case — SOT227B
• Technology — X3-Class
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
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• Mechanical mounting — screw
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• Manufacturer — IXYS
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• Semiconductor structure — single transistor
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• Technology — HiPerFET™

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