IXFN26N120P Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A

• Drain-source voltage — 1200
• Power dissipation — 695
• Drain current — 23A
• Gate charge — 2.55E-7
• On-state resistance — 0.5
• Atgriezeniskās atjaunošanās laiks — 3.0E-7
• Pulsed drain current — 60A
• Electrical mounting — screw
• —
• —
• Kind of channel — enhancement
• —
• Case — SOT227B
• —
• —
• Technology — Polar™
• —
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
• —
• —
• Manufacturer — IXYS
• Semiconductor structure — single transistor
• Technology — HiPerFET™

Atgriezties pie meklēšanas

Sākt jaunu meklēšanu ar atzīmētajiem filtriem