IXFN110N85X Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A

• Drain-source voltage — 850
• Power dissipation — 1170
• Drain current — 110A
• Atgriezeniskās atjaunošanās laiks — 2.05E-7
• Gate charge — 4.25E-7
• On-state resistance — 0.033
• Pulsed drain current — 220A
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — X-Class
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
• Manufacturer — IXYS
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• Semiconductor structure — single transistor
• Technology — HiPerFET™

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