IXFN20N120P Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A

• Drain-source voltage — 1200
• Power dissipation — 595
• Drain current — 20A
• Atgriezeniskās atjaunošanās laiks — 3.0E-7
• Gate charge — 1.93E-7
• On-state resistance — 0.57
• Pulsed drain current — 50A
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — Polar™
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
• Manufacturer — IXYS
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• Semiconductor structure — single transistor
• Technology — HiPerFET™

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