F4150R12KS4BOSA1 Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W

• Power dissipation — 960
• Max. off-state voltage — 1200
• Collector current — 150A
• Pulsed collector current — 300A
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• Case — AG-ECONO3-4
• Manufacturer — INFINEON TECHNOLOGIES
• Electrical mounting — Press-in PCB
• Topology — IGBT half-bridge x2
• Type of semiconductor module — IGBT
• Gate-emitter voltage — ±20V
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• Topology — NTC thermistor
• Semiconductor structure — transistor/transistor
• Mechanical mounting — screw
• Technology — EconoPACK™ 3
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