FF200R12KT4HOSA1 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A

• Power dissipation — 1.1kW
• Collector current — 200A
• Max. off-state voltage — 1.2kV
• Pulsed collector current — 400A
• Electrical mounting — screw
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• Case — AG-62MM-1
• Manufacturer — INFINEON TECHNOLOGIES
• Type of semiconductor module — IGBT
• Gate-emitter voltage — ±20V
• Semiconductor structure — transistor/transistor
• Mechanical mounting — screw
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• Topology — IGBT half-bridge
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