IXFN132N50P3 Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A

• Drain-source voltage — 500V
• Drain current — 112A
• Power dissipation — 1.5kW
• On-state resistance — 39mΩ
• Pulsed drain current — 330A
• Reverse recovery time — 250ns
• Gate charge — 250nC
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
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• Technology — Polar™
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• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
• Mechanical mounting — screw
• Manufacturer — IXYS
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• Semiconductor structure — single transistor
• Technology — HiPerFET™
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