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IRFB31N20D 200V 31A 200W TO220AB XXTO220AB.jpg

IRFB31N20D 200V 31A 200W TO220AB

Code PIRFB31N20D
  • Weight 0.00g

E-shop price: 2,25

Minimum order: 1 Repeatability : 1

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Description

Technical Description for IRFB31N20D

Product Overview

The IRFB31N20D is a high-performance N-channel MOSFET designed for power applications. With a voltage rating of 200V and a continuous current capability of 31A, this device is optimized for use in power conversion circuits, motor control applications, and other high-efficiency switching applications. Packaged in the TO-220AB form factor, it provides robust thermal performance and ease of mounting.

Key Specifications

  • Type: N-channel MOSFET
  • Maximum Voltage (V_DS): 200V
  • Continuous Drain Current (I_D): 31A
  • Power Dissipation (P_D): 200W
  • Gate Threshold Voltage (V_GS(th)): 2V to 4V
  • R_DS(on): 0.08Ω (at V_GS = 10V)
  • Operating Temperature Range: -55°C to +175°C
  • Package Type: TO-220AB

Electrical Characteristics

  • Gate-Source Voltage (V_GS): ±20V
  • Drain-Source Breakdown Voltage (V(BR)DSS): 200V minimum
  • Total Gate Charge (Q_g): 60nC (typical at V_GS = 10V)
  • Body Diode Characteristics:
    • Forward Voltage Drop (V_F): 1.5V (typical at I_F = 31A)
    • Reverse Recovery Time (t_rr): 120ns (typical)

Thermal Characteristics

  • Junction-to-Case Thermal Resistance (RθJC): 1.5°C/W
  • Junction-to-Ambient Thermal Resistance (RθJA): 62.5°C/W

Applications

The IRFB31N20D MOSFET is ideal for: - Power supply applications (buck converters, boost converters) - Motor drive systems - DC-DC converters - Lighting control systems - Inverters for renewable energy systems

Features

  • Low On-Resistance: Ensures high efficiency and minimal conduction losses.
  • Fast Switching Speed: Reduces switching losses, making it suitable for high-frequency applications.
  • High Voltage Capability: Handles high voltage applications up to 200V.
  • Robust Package: TO-220AB package allows for efficient heat dissipation and easy mounting.

Conclusion

The IRFB31N20D is a versatile and reliable N-channel MOSFET that meets the demands of high-performance power applications. With its excellent thermal and electrical characteristics, it is a suitable choice for engineers looking to design efficient power management solutions.

Specification