IXFN50N120SK Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC

• Drain-source voltage — 1200
• Drain current — 48A
• On-state resistance — 0.05
• Gate charge — 1.15E-7
• Atgriezeniskās atjaunošanās laiks — 5.4E-8
• Electrical mounting — screw
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• Kind of channel — enhancement
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• Case — SOT227B
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• Features of semiconductor devices — Kelvin terminal
• Type of semiconductor module — MOSFET transistor
• Polarisation — unipolar
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• Mechanical mounting — screw
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• Manufacturer — IXYS
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• Semiconductor structure — single transistor
• Technology — SiC

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