FP15R12W1T4_B3 Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A

• Power dissipation — 130
• Max. off-state voltage — 1200
• Collector current — 15A
• Pulsed collector current — 30A
• Topology — IGBT three-phase bridge
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• Semiconductor structure — diode/transistor
• Manufacturer — INFINEON TECHNOLOGIES
• Electrical mounting — Press-in PCB
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• Technology — EasyPIM™ 1B
• Type of semiconductor module — IGBT
• Gate-emitter voltage — ±20V
• Topology — three-phase diode bridge
• Topology — NTC thermistor
• Mechanical mounting — screw
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• Case — AG-EASY1B-1
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