BGH75N120HF1 Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3

• Power dissipation — 568
• Collector current — 75A
• Collector-emitter voltage — 1200
• Turn-on time — 1.4E-7
• Gate charge — 3.98E-7
• Turn-off time — 4.43E-7
• Pulsed collector current — 200A
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• Technology — Trench
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• Gate-emitter voltage — ±20V
• Technology — Field Stop
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• Case — TO247
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• Transistor type — IGBT
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• Manufacturer — BASiC SEMICONDUCTOR
• Features of semiconductor devices — integrated anti-parallel diode
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• Technology — SiC SBD
• Kind of package — tube
• Montāža — through-hole technology
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